750 V, 18 mohm SiC FET

Qorvo's UJ4C075018K3S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate • On-resistance (RDS(on)): 18 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery: Qrr = 102 nC\n• Low body diode VFSD: 1.14 V\n• Low gate charge: QG = 37.8 nC\n• Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive;

Qorvo

威讯联合

丝印：UJ4C075018K3S；Package：TO-247-3L；750V-18mW SiC FET

文件：653.05 Kbytes 页数：14 Pages

UNITEDSIC

UnitedSiC.

NXP
TSSOP-32

恩XP

上传：深圳庞田科技有限公司

NXP
HVSON-14

恩XP

上传：天津市博通航睿技术有限公司

NXP
HVSON-14

恩XP

上传：天津市博通航睿技术有限公司