650 V, 80 mohm Normally-On SiC JFET

Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also i • On-resistance (RDS(on)): 80 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Low gate charge\n• Low intrinsic capacitance;

Qorvo

威讯联合

丝印：UJ3N065080K3S；Package：TO-247-3L；80mW - 650V SiC Normally-On JFET

文件：396.11 Kbytes 页数：9 Pages

UNITEDSIC

UnitedSiC.

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - JFET 描述：650V 80 MOHM SIC JFET, G3, N-ON,

UNITEDSIC

UnitedSiC.

CUIDEVICES

CUIDEVICES

上传：深圳市三芯电子有限公司

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恩XP

上传：深圳庞田科技有限公司