Silicon Carbide (SiC) JFET - EliteSiC, 25 mohm, 650V, TO-247-3L

The UJ3N065025K3S is a 650V, 25 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal fo

ONSEMI

安森美半导体

650 V, 25 mohm Normally-On SiC JFET

Qorvo's UJ3N065025K3S is a 650 V, 25 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also i • On-resistance (RDS(on)): 25 mohm (typ)\n• Voltage controlled\n• Maximum operating temperature: 175 °C\n• Extremely fast switching not dependent on temperature\n• Low gate charge\n• Low intrinsic capacitance;

Qorvo

威讯联合

丝印：UJ3N065025K3S；Package：TO-247-3L；25mW - 650V SiC Normally-On JFET

文件：396.58 Kbytes 页数：9 Pages

UNITEDSIC

UnitedSiC.

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - JFET 描述：650V 25 MOHM SIC JFET, G3, N-ON,

UNITEDSIC

UnitedSiC.