Silicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 10A, 650V SiC Merged PiN-Schottky (MPS) Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the

ONSEMI

安森美半导体

10 A, 650 V SiC Merged PiN-Schottky (MPS) Diode

Qorvo's UJ3D06510TS is a 10 A, 650 V SiC Merged PiN Schottky (MPS) diode in a TO-220-2L package. With zero reverse recovery charge and 175 °C maximum junction temperature, this diode is ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. • Maximum operating temperature: 175 °C\n• Easy paralleling\n• Extremely fast switching not dependent on temperature\n• No reverse or forward recovery\n• Enhanced surge current capability, MPS structure\n• Excellent thermal performance, Ag sintered;

Qorvo

威讯联合

丝印：UJ3D06510TS；Package：TO-220-2L；10A - 650V SiC Schottky Diode

文件：967.96 Kbytes 页数：5 Pages

UNITEDSIC

UnitedSiC.

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 10A SIC SCHOTTKY DIODE G3,

UNITEDSIC

UnitedSiC.