UHB100SC12E1BC3N芯片代码丝印对应型号-114ic电子网

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UHB100SC12E1BC3N	文件：1.54042 Mbytes Page：13 Pages	丝印：UHB100SC12E1BC3N；Package：E1B；1200V-100A SiC Half-Bridge Module Features * Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive * On-resistance: RDS(on) = 9.4mW (typ) * Operating temperature: 150°C (max) * Excellent reverse recovery: Qrr = 1000nC * Low body diode voltage: VFSD = 1.4V * Low gate charge: QG = 170nC * Low intrinsic capacitance * ESD 文件：1.54042 Mbytes 页数：13 Pages	QORVO 威讯联合	QORVO
UHB100SC12E1BC3N	文件：1.54042 Mbytes Page：13 Pages	丝印：UHB100SC12E1BC3N；Package：E1B；1200V-100A SiC Half-Bridge Module Features * Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive * On-resistance: RDS(on) = 9.4mW (typ) * Operating temperature: 150°C (max) * Excellent reverse recovery: Qrr = 1000nC * Low body diode voltage: VFSD = 1.4V * Low gate charge: QG = 170nC * Low intrinsic capacitance * ESD 文件：1.54042 Mbytes 页数：13 Pages	QORVO 威讯联合	QORVO

更多UHB100SC12E1BC3N供应商更新时间2025-8-13 14:02:00