UHB50SC12E1BC3N芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UHB50SC12E1BC3N	文件：1.45817 Mbytes Page：13 Pages	丝印：UHB50SC12E1BC3N；Package：E1B；1200V-50A SiC Half-Bridge Module Features * On-resistance: RDS(on) = 19mW (typ) * Operating temperature: 150°C (max) * Excellent reverse recovery: Qrr = 495nC * Low body diode voltage: VFSD= 1.2V * Low gate charge: QG = 85nC * Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive * ESD protected: HBM class 2 and CDM c 文件：1.45817 Mbytes 页数：13 Pages	QORVO 威讯联合	QORVO
UHB50SC12E1BC3N	文件：1.45817 Mbytes Page：13 Pages	丝印：UHB50SC12E1BC3N；Package：E1B；1200V-50A SiC Half-Bridge Module Features * On-resistance: RDS(on) = 19mW (typ) * Operating temperature: 150°C (max) * Excellent reverse recovery: Qrr = 495nC * Low body diode voltage: VFSD= 1.2V * Low gate charge: QG = 85nC * Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive * ESD protected: HBM class 2 and CDM c 文件：1.45817 Mbytes 页数：13 Pages	QORVO 威讯联合	QORVO

更多UHB50SC12E1BC3N供应商更新时间2025-8-13 8:31:00