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FSF10A60B

FRD-LowForwardVoltageDrop

FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

NIEC

Nihon Inter Electronics Corporation

FSU10A60

FRD-LowForwardVoltageDrop

FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

GCF10A60

LowForwardVoltagedropDiode

FEATURES *SimilartoTO220ABCase *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

NIEC

Nihon Inter Electronics Corporation

GSF10A60

LowForwardVoltagedropDiode

FEATURES *SimilartoTO-220ABCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

NIEC

Nihon Inter Electronics Corporation

GSF10A60B

FRD-LowForwardVoltageDrop

FEATURES *SimilartoTO-220ABCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

NIEC

Nihon Inter Electronics Corporation

GSIB10A60

SINGLEPHASEGLASSPASSIVATEDBRIDGERECTIFIERVoltage:50to1000VCurrent:10.0A

GULFSEMIGulf Semiconductor

海湾电子海湾电子(山东)有限公司

ITK10A60W

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω •EasytocontrolGateswitching •Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

K10A60D

SwitchingRegulatorApplications

•Lowdrain-sourceON-resistance:RDS(ON)=0.58Ω(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

K10A60W

MOSFETsSiliconN-ChannelMOS(DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

S10A60

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

供应商型号品牌批号封装库存备注价格
N/A
23+
TO-220F(2PIN)
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
N/A
25+
TO-220F(2PIN)
880000
明嘉莱只做原装正品现货
询价
FORMOSA
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
罗姆
23+
TO220
1872
专业优势供应
询价
FRONTIER
2022+
350
全新原装 货期两周
询价
TAIWAN
24+
TO-220F
27500
原装正品,价格最低!
询价
N/A
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
N/A
24+
NA/
4300
原装现货,当天可交货,原型号开票
询价
N/A
2023+
TO-220F
8800
正品渠道现货 终端可提供BOM表配单。
询价
UF
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多UFF10A60供应商 更新时间2025-7-23 11:10:00