isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.38Ω • Easy to control Gate switching • Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.5 mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance an

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无锡固电

isc N-Channel MOSFET Transistor

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ISC

无锡固电

Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) Applications • Switching Voltage Regulators

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东芝

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

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MOSPEC

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