MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) Applications • Switching Voltage Regulators

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TOSHIBA

东芝

丝印：K10A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 85 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

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TOSHIBA

东芝

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

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MOSPEC

统懋

THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY

文件：50.98 Kbytes 页数：2 Pages

SENSITRON

THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY

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SENSITRON