丝印：UFB25SC12E1BC3N；Package：E1B；1200V-25A SiC Full-Bridge Module

Features * ESD protected: HBM class 2 and CDM class C3 * Low intrinsic capacitance * On-resistance: RDS(on) = 35mW (typ) * Operating temperature: 150°C (max) * Excellent reverse recovery: Qrr = 244nC * Low body diode voltage: VFSD= 1.4V * Low gate charge: QG = 42.5nC * Threshold voltage VG

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QORVO

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1200 V, 25 A SiC Full Bridge Module

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, S • On Resistance RDS(on): 35 mohm (typ)\n• Operating temperature: 150 C (max)\n• Excellent reverse recovery: Qrr = 244 nC\n• Low body diode VFSD: 1.4 V\n• Low gate charge: QG = 42.5 nC\n• Threshold voltage VG(th): 5 V (typ) allowing 0 to 15 V drive\n• Low intrinsic capacitance\n• ESD protected: HBM c;

Qorvo

威讯联合

LFBGA-225

MICROCHIP/微芯

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