UFB25SC12E1BC3N数据手册Qorvo中文资料规格书

描述 Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B module package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Advanced Ag sintering die attach technology gives the module superior thermal performance

特性 Features

• On Resistance RDS(on): 35 mohm (typ)
• Operating temperature: 150 C (max)
• Excellent reverse recovery: Qrr = 244 nC
• Low body diode VFSD: 1.4 V
• Low gate charge: QG = 42.5 nC
• Threshold voltage VG(th): 5 V (typ) allowing 0 to 15 V drive
• Low intrinsic capacitance
• ESD protected: HBM class 2 and CDM class C3

应用 Application

• EV Charging Stations
• PV Inverters
• Energy Storage
• Switch mode power supplies