1700V-400m廓 SiC Normally-on JFET

文件：222.94 Kbytes 页数：9 Pages

UNITEDSIC

UnitedSiC.

1700V-400mΩ SiC Normally-on JFET

United Silicon Carbide, Inc offers the high-performance G3 SiCnormally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal f • Typical on-resistanceRDS(on),typ of 400mΩ\n\n• Voltage controlled\n\n• Maximum operating temperature of 175°C\n\n• Extremely fast switching not dependent on temperature\n\n• Low gate charge\n\n• Low intrinsic capacitance;

Qorvo

威讯联合

丝印：UF3N170400B7S；Package：D2PAK-7L；1700V-400mW SiC Normally-on JFET

文件：520.789 Kbytes 页数：10 Pages

UNITEDSIC

UnitedSiC.

1700V-400m廓 SiC Normally-on JFET

文件：222.94 Kbytes 页数：9 Pages

UNITEDSIC

UnitedSiC.

Silicon Carbide (SiC) JFET - EliteSiC, 400 mohm, 1700V, D2PAK-7L

The UF3N170400B7S is a 1700V, 400 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal

ONSEMI

安森美半导体

1700 V, 400 mohm Normally-On SiC JFET

Qorvo's UF3N170400B7S is a 1700 V, 400 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also • On-resistance (RDS(on)): 400 mohm (typ)\n• Voltage controlled\n• Maximum operating temperature: 175 °C\n• Extremely fast switching not dependent on temperature\n• Low gate charge\n• Low intrinsic capacitance;

Qorvo

威讯联合

Package：TO-263-8，D²Pak（7 引线+接片），TO-263CA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - JFET 描述：JFET 1700V SIC

UNITEDSIC

UnitedSiC.