UF3C120150B7S中文资料1200 V, 150 mohm SiC FET数据手册Qorvo规格书

描述 Description

Qorvo's UF3C120150B7S 1200 V, 150 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

特性 Features

• On-resistance (RDS(on)): 150 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery: Qrr = 67 nC
• Low body diode VFSD: 1.46 V
• Low gate charge: QG = 25.7 nC
• Threshold voltage VG(th): 4.4 V (typ) allowing 0 to 15 V drive

应用 Application

• Telecom and Server Power
• Industrial Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating