Silicon Carbide (SiC) Cascode JFET - EliteSiC, 35 mohm, 1200V, TO-247-4L

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller sy

ONSEMI

安森美半导体

1200 V, 35 mohm SiC FET

Qorvo's UF3C120040K4S is a 1200 V, 35 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 pack • On-resistance (RDS(on)): 35 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UF3C120040K4S；Package：TO-247-4L；1200V-35mW SiC Cascode

文件：477.02 Kbytes 页数：10 Pages

UNITEDSIC

UnitedSiC.

TO263-7

USCI

上传：深圳市斌腾达科技有限公司

DO-41

MIC

昌福电子

上传：深圳市乐创天科技有限公司