1200 V, 35 mohm SiC FET

Qorvo's UF3C120040K3S 1200 V, 35 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery ch • On-resistance (RDS(on)): 35 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UF3C120040K3S；Package：TO-247-3L；35mW - 1200V SiC Cascode

文件：554.4 Kbytes 页数：11 Pages

UNITEDSIC

UnitedSiC.

1200V-35mW SiC FET

文件：435.93 Kbytes 页数：10 Pages

UNITEDSIC

UnitedSiC.

TO263-7

USCI

上传：深圳市斌腾达科技有限公司

DO-41

MIC

昌福电子

上传：深圳市乐创天科技有限公司