650 V, 80 mohm SiC FET

Qorvo's UF3C065080K3S 650 V, 80 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate • On-resistance (RDS(on)): 80 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UF3C065080K3S；Package：TO-247-3L；650V-80mW SiC FET

文件：521.63 Kbytes 页数：12 Pages

UNITEDSIC

UnitedSiC.

650V-80mW SiC FET

文件：435.44 Kbytes 页数：10 Pages

UNITEDSIC

UnitedSiC.

USCI
TO263-7

USCI

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MIC
DO-41

MIC

昌福电子

上传：深圳市乐创天科技有限公司