Silicon Carbide (SiC) Cascode JFET - EliteSiC,  80 mohm, 650V, D2PAK-3L

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller sy

ONSEMI

安森美半导体

650 V, 80 mohm SiC FET

Qorvo's UF3C065080B3 650 V, 80 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate d • On-resistance (RDS(on)): 80 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UF3C065080B3；Package：D2PAK-3L；650V-80mW SiC FET

文件：494.7 Kbytes 页数：12 Pages

UNITEDSIC

UnitedSiC.

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 650V 25A TO263

UNITEDSIC

UnitedSiC.