N- and P-Channel 30 V (D-S) MOSFET

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微碧半导体

DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

文件：163.87 Kbytes 页数：6 Pages

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N- and P-Channel 30 V (D-S) MOSFET

文件：2.58057 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

N- and P-Channel 30 V (D-S) MOSFET

文件：2.58066 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

文件：163.87 Kbytes 页数：6 Pages

UTC

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N- and P-Channel 30 V (D-S) MOSFET

文件：2.58065 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

The UTC UD4606Q provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications. · N-Channel: 30V/6.9A    RDS(ON) < 22.5 mΩ (typ.) @VGS =10V \n·RDS(ON) < 34.5 mΩ (typ.) @VGS=4.5V \n· P-Channel: -30V/-6A     RDS(ON) < 28 mΩ (typ.) @VGS= -10V \n·RDS(ON) < 44 mΩ (typ.) @VGS= -4.5V \n· Reliable and rugged;

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DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

The UTC UD4606Z is a dual enhancement mode Power MOSFET using UTC perfect trench technology to provide customerswith advanced RDS(ON) and low gate charge. This device has ESD protection function.      These complementary MOSFETs can be used to form a level shifted high side switch and for other appl • N-Channel: 30V/6.9A   \n• RDS(ON)=34.5mΩ ((TYP.) (VGS=4.5V) \n• RDS(ON)=28mΩ(TYP.) (VGS=-10V ) \n• Reliable and rugged \n• ESD protection;

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Combo Power MOSFET

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