DUAL ENHANCEMENT MODE

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N- and P-Channel 30 V (D-S) MOSFET

文件：2.5807 Mbytes 页数：14 Pages

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DUAL ENHANCEMENT MODE

文件：323.25 Kbytes 页数：10 Pages

UTC

友顺

N- and P-Channel 30 V (D-S) MOSFET

文件：2.5807 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

N- and P-Channel 30 V (D-S) MOSFET

文件：2.5807 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

The UTC UD4606Q provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications. · N-Channel: 30V/6.9A    RDS(ON) < 22.5 mΩ (typ.) @VGS =10V \n·RDS(ON) < 34.5 mΩ (typ.) @VGS=4.5V \n· P-Channel: -30V/-6A     RDS(ON) < 28 mΩ (typ.) @VGS= -10V \n·RDS(ON) < 44 mΩ (typ.) @VGS= -4.5V \n· Reliable and rugged;

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