DUAL HIGH-SPEED FET DRIVER

文件：553.61 Kbytes 页数：6 Pages

TI

德州仪器

DUAL HIGH-SPEED FET DRIVER

文件：553.61 Kbytes 页数：6 Pages

TI

德州仪器

Package：8-DIP（0.300"，7.62mm）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR LOW-SIDE 8DIP

TI

德州仪器

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2709AGR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) • Lo

文件：344 Kbytes 页数：8 Pages

RENESAS

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2709GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) • Low

文件：341.86 Kbytes 页数：8 Pages

RENESAS

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2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

文件：96.88 Kbytes 页数：6 Pages

NEC

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