FDB2572

N-ChannelPowerTrenchMOSFET150V,29A,54m?

Features •rDS(ON)=45mΩ(Typ.),VGS=10V,ID=9A •Qg(tot)=26nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectures

FDD2572

N-ChannelPowerTrenchMOSFET150V,29A,54m?

Features •rDS(ON)=45mΩ(Typ.),VGS=10V,ID=9A •Qg(tot)=26nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectures

FDD2572

N-channelEnhancementModePowerMOSFET

Features VDS=150V,ID=40A RDS(ON)

FDD2572

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=29A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=54mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD2572-NL

N-Channel150V(D-S)MOSFET

FDMS2572

N-ChannelUltraFETTrenchMOSFET

FDMS2572

N-ChannelUltraFETTrench짰MOSFET150V,27A,47m?

FDP2572

iscN-ChannelMOSFETTransistor

FDP2572

STEREO200WCLASS-TDIGITALAUDIOAMPLIFIERDRIVERUSINGDIGITALPOWERPROCESSINGTECHNOLOGY

GENERALDESCRIPTION TheTK2150(TC2001/TP2150chipset)isatwo-channel,200W(6Ω)perchannelAmplifierDriverthatusesTripath’sproprietaryDigitalPowerProcessing(DPP™)technology.Class-TamplifiersofferboththeaudiofidelityofClass-ABandthepowerefficiencyofClass-Damplifiers. F

FDP2572

N-ChannelPowerTrenchMOSFET150V,29A,54m?

Features •rDS(ON)=45mΩ(Typ.),VGS=10V,ID=9A •Qg(tot)=26nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectures