DUAL HIGH-SPEED FET DRIVER

文件：553.61 Kbytes 页数：6 Pages

TI

德州仪器

DUAL HIGH-SPEED FET DRIVER

文件：553.61 Kbytes 页数：6 Pages

TI

德州仪器

DUAL HIGH-SPEED FET DRIVER

文件：553.61 Kbytes 页数：6 Pages

TI

德州仪器

DUAL HIGH-SPEED FET DRIVER

文件：178.82 Kbytes 页数：5 Pages

TI

德州仪器

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

文件：79.46 Kbytes 页数：8 Pages

NEC

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