具有 40V VDD 和 5V 稳压输出的航天级 1.5A/1.5A 双通道栅极驱动器

The UC3709 family of power drivers is an effective low-cost solution to the problem of providing fast turn-on and off for the capacitive gates of power MOSFETs. Made with a high-speed Schottky process, these devices will provide up to 1.5 A of either source or sink current from a totem-pole output s • 1.5 Amp Source/Sink Drive\n• Pin Compatible with 0026 Products\n• 40 ns Rise and Fall into 1000pF\n• Low Quiescent Current\n• 5 V to 40 V Operation\n• Thermal Protection;

TI

德州仪器

DUAL HIGH-SPEED FET DRIVER

文件：178.82 Kbytes 页数：5 Pages

TI

德州仪器

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

文件：79.46 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power

文件：234.15 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power

文件：234.15 Kbytes 页数：10 Pages

RENESAS

瑞萨