丝印：U6N；Package：DSBGA；SINGLE BILATERAL ANALOG SWITCH

1FEATURES 2· Available in the Texas Instruments NanoFree™ Package · Wide VCC Range of 0.8 V to 2.7 V · Sub-1-V Operable · Low Power Consumption, 10-mA Max ICC · High On-Off Output Voltage Ratio · High Degree of Linearity · High Speed – Max 0.2 ns (VCC = 1.8 V, CL = 15 pF) · Low On-State

文件：755.34 Kbytes 页数：24 Pages

TI

德州仪器

丝印：U6N；Package：DSBGA；SINGLE BILATERAL ANALOG SWITCH

1FEATURES 2· Available in the Texas Instruments NanoFree™ Package · Wide VCC Range of 0.8 V to 2.7 V · Sub-1-V Operable · Low Power Consumption, 10-mA Max ICC · High On-Off Output Voltage Ratio · High Degree of Linearity · High Speed – Max 0.2 ns (VCC = 1.8 V, CL = 15 pF) · Low On-State

文件：755.34 Kbytes 页数：24 Pages

TI

德州仪器

丝印：U6N；Package：DSBGA；DUAL BILATERAL ANALOG SWITCH

FEATURES · Available in the Texas Instruments NanoFree™ Package · Operates at 0.8 V to 2.7 V · Sub-1-V Operable · Max tpd of 0.5 ns at 1.8 V · Low Power Consumption, 10 mA at 2.7 V · High On-Off Output Voltage Ratio · High Degree of Linearity · Latch-Up Performance Exceeds 100 mA Per JES

文件：680.08 Kbytes 页数：25 Pages

TI

德州仪器

丝印：U6N；Package：DSBGA；DUAL BILATERAL ANALOG SWITCH

FEATURES · Available in the Texas Instruments NanoFree™ Package · Operates at 0.8 V to 2.7 V · Sub-1-V Operable · Max tpd of 0.5 ns at 1.8 V · Low Power Consumption, 10 mA at 2.7 V · High On-Off Output Voltage Ratio · High Degree of Linearity · Latch-Up Performance Exceeds 100 mA Per JES

文件：680.08 Kbytes 页数：25 Pages

TI

德州仪器

丝印：U6N70H；Package：TO-251；700V N-Channel MOSFET

文件：1.38881 Mbytes 页数：10 Pages

WUMC

紫光国微

N-Channel 650V (D-S)Power MOSFET

文件：1.90675 Mbytes 页数：9 Pages

VBSEMI

微碧半导体