丝印：U7N；Package：DSBGA；SN74AUC1G17 Single Schmitt-Trigger Buffer

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：917.83 Kbytes 页数：26 Pages

TI

德州仪器

丝印：U7N；Package：DSBGA；SN74AUC1G17 Single Schmitt-Trigger Buffer

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：917.83 Kbytes 页数：26 Pages

TI

德州仪器

丝印：U7NA60；Package：TO-251AA；600V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@3.5A

文件：487.93 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：U7N65H；Package：TO-251；650V N-Channel MOSFET

文件：1.71726 Mbytes 页数：10 Pages

WUMC

紫光国微