丝印：U1G；Package：SOD-123FL；Surface Mount Ultra Fast Recovery Rectifier Diodes

Features Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Super Fast reverse recovery time Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.75747 Mbytes 页数：3 Pages

RFE

RFE international

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER

Features Glass passivated device Ideal for surface mouted applications Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension Low reverse leakage

文件：301.81 Kbytes 页数：3 Pages

SY

顺烨电子

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER

FEATURES Glass passivated device Ideal for surface mouted applications Low reverse leakage Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension MECHANICAL DATA Case: JEDEC SOD-123FL molded plastic b

文件：301.83 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

HIGH EFFICIENCY RECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Glass passived junction Low power loss, high efficiency High surge current capability High speed switching, Low leakage Low forward voltage drop High current capability, High reliability High temperature sold

文件：993.78 Kbytes 页数：2 Pages

SAMYANG

三阳电子

Surface Mount Ultrafast Rectifiers

文件：56.67 Kbytes 页数：2 Pages

YEASHIN

亚昕科技

丝印：U1G；MOS FIELD EFFECT TRANSISTOR

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for use as RF amplif

文件：178.45 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：U1G；MOS FIELD EFFECT TRANSISTOR

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for uses as RF

文件：259.829 Kbytes 页数：10 Pages

RENESAS

瑞萨

丝印：U1G；Package：SMB；Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V

Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) • NRVUS and SURS8 Prefixes for Automotive and Other Applications

文件：195.66 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：U1G；Package：SMB；Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V

Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) • NRVUS and SURS8 Prefixes for Automotive and Other Applications

文件：195.66 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：U1G；Package：SOD-123FL；SURFACE MOUNT HIGH EFFICIENCY RECTIFIER

Features Glass passivated device Ideal for surface mouted applications Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension Low reverse leakage

文件：301.83 Kbytes 页数：3 Pages

SY

顺烨电子