丝印：U04R；Package：SOT-23(DBV)；SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器

丝印：U04R；Package：SOT-23(DBV)；SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器

丝印：U04R；Package：SOT-23(DBV)；SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器

丝印：U04R；Package：SOT-23；DUAL INVERTER GATE

Available in the Texas Instruments NanoStar and NanoFree Packages Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation Ioff Supports Partial-Power-Down Mode Operation Sub 1-V Operable Max tpd of 1.7 ns at 1.8 V Low Power Consumption, 10 μA at 1.

文件：703.22 Kbytes 页数：19 Pages

TI

德州仪器

丝印：U04R；Package：SOT-23；DUAL INVERTER GATE

Available in the Texas Instruments NanoStar and NanoFree Packages Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation Ioff Supports Partial-Power-Down Mode Operation Sub 1-V Operable Max tpd of 1.7 ns at 1.8 V Low Power Consumption, 10 μA at 1.

文件：703.22 Kbytes 页数：19 Pages

TI

德州仪器