TW031V65C芯片代码丝印对应型号-114ic电子网

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TW031V65C	文件：711.16 Kbytes Page：12 Pages	丝印：TW031V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 31 mΩ (typ.) (5) Less susceptible to 文件：711.16 Kbytes 页数：12 Pages	TOSHIBA 东芝	TOSHIBA
TW031V65C	文件：711.16 Kbytes Page：12 Pages	丝印：TW031V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 31 mΩ (typ.) (5) Less susceptible to 文件：711.16 Kbytes 页数：12 Pages	TOSHIBA 东芝	TOSHIBA

更多TW031V65C供应商更新时间2025-9-21 9:18:00