丝印：TW054V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 54 mΩ (typ.) (5) Less susceptible to

文件：739.39 Kbytes 页数：12 Pages

TOSHIBA

东芝

丝印：TW054V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 54 mΩ (typ.) (5) Less susceptible to

文件：739.39 Kbytes 页数：12 Pages

TOSHIBA

东芝