丝印：14D；Package：SOT-23F；Bipolar Transistors Silicon PNP Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) AEC-Q101 qualified (Note 1) (2) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.19 V (max) (4) High-speed switching: tf = 40 ns (typ.)

文件：274.79 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) AEC-Q101 qualified (Note 1) (2) High DC current gain: hFE = 120 to 300 (IC = 0.1 A) (3) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) (4) High-speed switching: tf = 200 ns (typ.)

文件：280.95 Kbytes 页数：7 Pages

TOSHIBA

东芝

5.0A Ultra Fast Recovery Rectifier

文件：136.84 Kbytes 页数：4 Pages

TAITRON

Temperature Compensated Crystal Oscillator

文件：206.6 Kbytes 页数：5 Pages

VECTRON