首页 >TT75N10KOF-A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FastSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM75N10usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司 | ADV | ||
N-ChannelEnhancementModeFieldEffectTransistor Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM75N10EusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司 | ADV | ||
N-ChannelEnhancementModeFieldEffectTransistor Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM75N10QusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司 | ADV | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
100V/75AN-ChannelEnhancementModeMOSFET | HY HY ELECTRONIC CORP. | HY | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS |
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