首页 >TSM55N03CP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance •Logiclevelcompatible Appl | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP55N03LTAinaSOT78(TO-220AB) PHB55N03LTAinaSOT404(D2-PAK) PHD55N03LTAinaSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance •Logiclevelcompatible Appl | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP55N03LTAinaSOT78(TO-220AB) PHB55N03LTAinaSOT404(D2-PAK) PHD55N03LTAinaSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
详细参数
- 型号：
TSM55N03CP
- 功能描述：
MOSFET 25V N channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
询价 | ||
TSC/台半 |
24+ |
TO-252 |
33268 |
只做原装进口!正品支持实单! |
询价 | ||
TSC |
24+ |
TO-252 |
56000 |
公司进口原装现货 批量特价支持 |
询价 | ||
TSC |
20+ |
TO-252 |
10 |
进口原装现货,假一赔十 |
询价 | ||
TSC/台湾半导体 |
22+ |
SOT-252 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
T |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
询价 | ||
TOSHIBA |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
询价 | ||
TSC/台湾半导体 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
TSM |
22+ |
TO-252 |
25000 |
只有原装绝对原装,支持BOM配单! |
询价 | ||
TSM |
22+ |
TO-252 |
25000 |
只有原装原装,支持BOM配单 |
询价 |
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