ULTRA MINIATURE SMD CMOS OSCILLATOR (3.2 x 2.5 x 1.2mm)

FEATURES: • LOW COST SMALL SMD PACKAGE • LOW VOLTAGE/LOW CURRENT • AEC-Q200 QUALIFIED OPTION

文件：298.7 Kbytes 页数：1 Pages

Transko

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.14696 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 55 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

文件：956.54 Kbytes 页数：17 Pages

TI

德州仪器

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

文件：1.24824 Mbytes 页数：20 Pages

TI

德州仪器

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

文件：1.24824 Mbytes 页数：20 Pages

TI

德州仪器

丝印：2O98；Package：SOT-23；TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

文件：1.24824 Mbytes 页数：20 Pages

TI

德州仪器

TSM36CA Bidirectional Surge Protection Device in SOT-23

1 Features • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current of 100nA (maximum) • Industrial temperature range:

文件：2.48686 Mbytes 页数：12 Pages

TI

德州仪器

丝印：3IIG；Package：SOT-23；TSM36CA Bidirectional Surge Protection Device in SOT-23

1 Features • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current of 100nA (maximum) • Industrial temperature range:

文件：2.48686 Mbytes 页数：12 Pages

TI

德州仪器

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：2.35623 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Power MOSFET 60V, 27A, 30m廓

文件：384.17 Kbytes 页数：6 Pages

TSC

台湾半导体