TSM32

ULTRA MINIATURE SMD CMOS OSCILLATOR (3.2 x 2.5 x 1.2mm)

FEATURES: •LOWCOSTSMALLSMDPACKAGE •LOWVOLTAGE/LOWCURRENT •AEC-Q200QUALIFIEDOPTION

TSM35N03CPRO

N-Channel 30-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

TSM36A

TSM36A Surge Protection Device in SOT-23 Package

1Features •Undirectionalsurgeprotectionagainst1.7kV,42Ω IEC61000-4-5surgetestforindustrialsignallines •Robustsurgeprotection: –IEC61000-4-5(8/20μs):41A •Lowclampingvoltageof55Vat25Afor8/20μs surgecurrentprotectsdownstreamcomponents •36Vworkingvolt

TSM36A

TSM36A Surge Protection Device in SOT-23 Package

1Features •Undirectionalsurgeprotectionagainst1.7kV,42Ω IEC61000-4-5surgetestforindustrialsignallines •Robustsurgeprotection: –IEC61000-4-5(8/20μs):41A •Lowclampingvoltageof50Vat25Afor8/20μs surgecurrentprotectsdownstreamcomponents •36Vworkingvolt

TSM36A_V01

TSM36A Surge Protection Device in SOT-23 Package

1Features •Undirectionalsurgeprotectionagainst1.7kV,42Ω IEC61000-4-5surgetestforindustrialsignallines •Robustsurgeprotection: –IEC61000-4-5(8/20μs):41A •Lowclampingvoltageof50Vat25Afor8/20μs surgecurrentprotectsdownstreamcomponents •36Vworkingvolt

TSM36ADBZR

Marking：2O98；Package：SOT-23；TSM36A Surge Protection Device in SOT-23 Package

1Features •Undirectionalsurgeprotectionagainst1.7kV,42Ω IEC61000-4-5surgetestforindustrialsignallines •Robustsurgeprotection: –IEC61000-4-5(8/20μs):41A •Lowclampingvoltageof50Vat25Afor8/20μs surgecurrentprotectsdownstreamcomponents •36Vworkingvolt

TSM36CA

TSM36CA Bidirectional Surge Protection Device in SOT-23

1Features •IEC61000-4-2ESDprotection: –±30kVcontactdischarge –±30kVairgapdischarge •IEC61000-4-5surgeprotection: –20A(8/20μs) –Clampingvoltage:55Vat20A(8/20μs) •IOcapacitance:15pF(typical) •Lowleakagecurrentof100nA(maximum) •Industrialtemperaturerange:

TSM36CADBZR

Marking：3IIG；Package：SOT-23；TSM36CA Bidirectional Surge Protection Device in SOT-23

1Features •IEC61000-4-2ESDprotection: –±30kVcontactdischarge –±30kVairgapdischarge •IEC61000-4-5surgeprotection: –20A(8/20μs) –Clampingvoltage:55Vat20A(8/20μs) •IOcapacitance:15pF(typical) •Lowleakagecurrentof100nA(maximum) •Industrialtemperaturerange:

TSM3N80CIC0

Power MOSFET

FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC

TSM300NB06CR

N-Channel Power MOSFET 60V, 27A, 30m廓