首页 >TSM2N60CPROMOS(场效应管)>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET GeneralDescription TheTSM2N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET GeneralDescription TheTSM2N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | Winsemi | ||
N-ChannelMOSFET 600VN-ChannelMOSFET Features □LowIntrinsicCapacitances □ExcellentSwitchingCharacteristics □ExtendedSafeOperatingArea □UnrivalledGateCharge:8.5nC(Typ.) □BVDSS=600V,ID=2A □LowerRDS(on):5Ω(Max)@VG=10V □100AvalancheTested | WISDOM Wisdom technologies Int`l | WISDOM | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
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