TSM1N45CWRP

450V N-Channel Power MOSFET

1N45

GOLDBONDEDGERMANIUMDIODE

MTD1N45

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

MTP1N45

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

SSM1N45B

450VN-ChannelMOSFET

SSN1N45B

450VN-ChannelMOSFET

SSN1N45BTA

N-ChannelB-FET450V,0.5A,4.25廓

TSM1N45

450VN-ChannelPowerMOSFET

GeneralDescription TheTSM1N45isN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingplanarDMOStechnologyprocess.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigherenerg

TSM1N45CT

N-Channel60-V(D-S)MOSFET

TSM1N45D

450VN-ChannelPowerMOSFET