450V N-Channel Power MOSFET

General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energ

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TSC

台湾半导体

450V N-Channel Power MOSFET

文件：459.35 Kbytes 页数：8 Pages

TSC

台湾半导体

GOLD BONDED GERMANIUM DIODE

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.72 Kbytes 页数：2 Pages

ISC

无锡固电