Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA6203UL is an infrared, 875 nm emitting diode in GaAlAs technology, molded in a clear, untinted plastic package. It is certified according to UL217 standard for smoke alarms. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelen

文件：110.3 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA6203UL is an infrared, 875 nm emitting diode in GaAlAs technology, molded in a clear, untinted plastic package. It is certified according to UL217 standard for smoke alarms. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelen

文件：110.84 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. In contras

文件：88.11 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. In contras

文件：114.26 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA6500 is an infrared, 875 nm emitting diode in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity:

文件：113.09 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA6500 is an infrared, 875 nm emitting diode in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity:

文件：113.09 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. In contras

文件：114.26 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. In contras

文件：114.26 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. In contras

文件：114.26 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and the low forward vo

文件：142.84 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司