High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and the low forward vo

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VishayVishay Siliconix

威世科技

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Vishay

威世科技

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 950 nm • High reliability • Angle of ha

文件：110.99 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Infrared Emitting Diode, 950 nm, GaAs

文件：112.19 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Infrared Emitting Diode, 950 nm, GaAs

文件：119.65 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技