GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

文件：89.15 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliabilit

文件：105.06 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

文件：138.26 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

文件：138.26 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode

Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

文件：105.81 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA5500 is an infrared, 875 nm emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliab

文件：103.44 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA5500 is an infrared, 875 nm emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliab

文件：103.44 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

文件：138.26 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

文件：138.26 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

文件：138.26 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司