首页 >TSD30H120CWMNG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LowForwardVoltageTrench-basedSchottkyRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LowForwardVoltageTrench-basedSchottkyRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Diode–Power,BareDieGenVII,FastRecovery1200V,30A Features •AdvancedGenVIITechnology •FastandSoftRecovery •MaximumJunctionTemperature175°C •LowForwardVoltage:VF=1.78V(Typ.)IF=30A •EasytoParallelOperation TypicalApplications •Solar •EnergyStorage •IndustrialMotorControl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Diode–Power,BareDieGenVII,FastRecovery1200V,30A Features •AdvancedGenVIITechnology •FastandSoftRecovery •MaximumJunctionTemperature175°C •LowForwardVoltage:VF=1.78V(Typ.)IF=30A •EasytoParallelOperation TypicalApplications •Solar •EnergyStorage •IndustrialMotorControl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiCSchottkyBarrierDiode Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc=162nC(typ.) (4)Lowreversecurrent:IR=2.8μA(ty | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TrenchSchottkyRectifier | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
TrenchMOSBarrierSchottkyRectifier | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
TrenchSchottkyRectifier | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
30A,100V-200VTrenchSchottkyRectifiers | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
TrenchSchottkyRectifier | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC |
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