Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 30 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 30 A • Easy to Parallel Operation Typical Applications • Solar • Energy Storage • Industrial Motor Control

文件：102.14 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 30 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 30 A • Easy to Parallel Operation Typical Applications • Solar • Energy Storage • Industrial Motor Control

文件：104.17 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 30 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 30 A • Easy to Parallel Operation Typical Applications • Solar • Energy Storage • Industrial Motor Control

文件：104.17 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Power Diode Bare Die

1200 V, 30 A,牋Gen VII, Fast Recovery Diode • Advanced Gen VII Technology\n• Fast and Soft Recovery\n• Low Forward Voltage\n• Easy to Parallel Operation;

ONSEMI

安森美半导体