Low Forward Voltage Trench-based Schottky Rectifier

文件：60.8 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Low Forward Voltage Trench-based Schottky Rectifier

文件：60.8 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 120V 7.5A TO220

ONSEMI

安森美半导体

Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 30 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 30 A • Easy to Parallel Operation Typical Applications • Solar • Energy Storage • Industrial Motor Control

文件：102.14 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 30 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 30 A • Easy to Parallel Operation Typical Applications • Solar • Energy Storage • Industrial Motor Control

文件：104.17 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.27 V (typ.) (3) Low total capacitive charge: Qc = 162 nC (typ.) (4) Low reverse current: IR = 2.8 μA (ty

文件：449.64 Kbytes 页数：7 Pages

TOSHIBA

东芝