N-Channel 650 V (D-S) MOSFET

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微碧半导体

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

文件：174.02 Kbytes 页数：4 Pages

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台湾半导体

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

文件：174.02 Kbytes 页数：4 Pages

TSC

台湾半导体

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

文件：174.02 Kbytes 页数：4 Pages

TSC

台湾半导体