丝印：S10E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 μA (typ.

文件：432.62 Kbytes 页数：7 Pages

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SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\n\nFeature：Chip design of 3rd generation\n\nNumber of Circuits：1\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

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SiC Schottky Barrier Diode

文件：156.24 Kbytes 页数：5 Pages

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SiC Schottky Barrier Diode

文件：294.34 Kbytes 页数：6 Pages

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