丝印：S10E65F；Package：TO-220-2L；SiC Schottky Barrier Diode

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Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DODE SCHOTTKY 650V TO220

Toshiba Semiconductor and Storage

SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 μA (typ.

文件：432.62 Kbytes 页数：7 Pages

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SiC Schottky Barrier Diode

文件：156.24 Kbytes 页数：5 Pages

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