RF AMPLIFIER

Features ■ High Gain: 32.5 dB Typical ■ Low Noise Figure: 2 dB Typical ■ High Output Power: +22 dBm Typical

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SPECTRUM

RF AMPLIFIER MODEL

文件：45.96 Kbytes 页数：1 Pages

APITECH

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V dr

文件：70.41 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V

文件：297.32 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt

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DIODES

美台半导体