TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

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TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

耐辐射 1MHz PWM 控制器，能够驱动 MOSFET 或 GaN FET

The TPS7H502x is a radiation-hardness-assured, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enab Radiation performance: \n \nRadiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)\n \nSingle-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg\n \nSingle-event transient (SET) and single-event functional inte;

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Radiation-hardened, QMLP 100% duty cycle PWM controller for driving MOSFET or GaN FETs

TPS7H502x 是一款具有耐辐射加固保障的电流模式单端 PWM 控制器，配备集成的栅极驱动器，可用于基于硅和氮化镓 (GaN) 功率半导体的转换器设计。TPS7H502x 集成了多个关键功能，例如软启动、使能和可调斜率补偿，同时保持较小的封装尺寸。该控制器还具有 0.6V ± 1% 的电压基准容差，可支持高精度电源转换器设计。\n\nTPS7H502x 可通过 SYNC 引脚使用外部时钟来运行，也可使用 RT 引脚以用户决定的频率对内部振荡器进行编程来运行。该器件的开关频率能够高达 1MHz。控制器的驱动器级具有 4.5V 至 14V 的宽输入电压范围，并支持高达 1.2A 的峰值 辐射性能： \n \n耐辐射保障 (RHA) 高达 100krad(Si) 总电离剂量 (TID)\n \n单粒子锁定 (SEL)、单粒子烧毁 (SEB) 和单粒子栅穿 (SEGR) 对于 LET 的抗扰度 = 75MeV-cm2/mg\n \n单粒子瞬态 (SET) 和单粒子功能中断 (SEFI) 的特征值高达 LET = 75MeV-cm2/mg\n \n\n \n控制器级和驱动器级的输入电压范围均为 4.5V 至 14V\n \n专用栅极驱动器电压输入引脚 (PVIN) 可驱动硅器件和 GaN 器件 \n \n1.2A 峰值拉电流和灌电流（12V 时）\n \n为了驱动 GaN，可选择将;

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