TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

Radiation-hardened, QMLP 100% duty cycle PWM controller for driving MOSFET or GaN FETs

TPS7H502x 是一款具有耐辐射加固保障的电流模式单端 PWM 控制器，配备集成的栅极驱动器，可用于基于硅和氮化镓 (GaN) 功率半导体的转换器设计。TPS7H502x 集成了多个关键功能，例如软启动、使能和可调斜率补偿，同时保持较小的封装尺寸。该控制器还具有 0.6V ± 1% 的电压基准容差，可支持高精度电源转换器设计。\n\nTPS7H502x 可通过 SYNC 引脚使用外部时钟来运行，也可使用 RT 引脚以用户决定的频率对内部振荡器进行编程来运行。该器件的开关频率能够高达 1MHz。控制器的驱动器级具有 4.5V 至 14V 的宽输入电压范围，并支持高达 1.2A 的峰值 辐射性能： \n \n耐辐射保障 (RHA) 高达 100krad(Si) 总电离剂量 (TID)\n \n单粒子锁定 (SEL)、单粒子烧毁 (SEB) 和单粒子栅穿 (SEGR) 对于 LET 的抗扰度 = 75MeV-cm2/mg\n \n单粒子瞬态 (SET) 和单粒子功能中断 (SEFI) 的特征值高达 LET = 75MeV-cm2/mg\n \n\n \n控制器级和驱动器级的输入电压范围均为 4.5V 至 14V\n \n专用栅极驱动器电压输入引脚 (PVIN) 可驱动硅器件和 GaN 器件 \n \n1.2A 峰值拉电流和灌电流（12V 时）\n \n为了驱动 GaN，可选择将;

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器