TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

耐辐射 1MHz PWM 控制器，能够驱动 MOSFET 或 GaN FET

The TPS7H502x is a radiation-hardness-assured, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enab Radiation performance: \n \nRadiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)\n \nSingle-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg\n \nSingle-event transient (SET) and single-event functional inte;

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器