| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TPS7H2201 | TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy 文件:2.68613 Mbytes 页数:49 Pages | TI 德州仪器 | TI | |
TPS7H2201 | TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件:2.61896 Mbytes 页数:51 Pages | TI 德州仪器 | TI | |
丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 页数:51 Pages | TI 德州仪器 | TI | ||
丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.66611 Mbytes 页数:51 Pages | TI 德州仪器 | TI | ||
丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 页数:51 Pages | TI 德州仪器 | TI | ||
丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 页数:51 Pages | TI 德州仪器 | TI | ||
丝印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.66611 Mbytes 页数:51 Pages | TI 德州仪器 | TI | ||
丝印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 页数:51 Pages | TI 德州仪器 | TI | ||
丝印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) 文件:2.74487 Mbytes 页数:49 Pages | TI 德州仪器 | TI | ||
丝印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP Radiation Hardened 1.5-V to 7-V, 6-A Load Switch 1 Features 1• Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg • Integrated single 文件:1.55903 Mbytes 页数:40 Pages | TI 德州仪器 | TI |
技术参数
- Ron (typ) (mΩ):
20
- Vin (min) (V):
1.5
- Vin (max) (V):
7
- Vabsmax_cont (V):
7.5
- Current limit (min) (A):
0.5
- Current limit (max) (A):
7.5
- Overcurrent response:
Circuit breaker
- Fault response:
Auto-retry
- Soft start:
Adjustable
- Overvoltage response:
Cut-off
- Features:
Current monitoring
- Rating:
Space
- Device type:
eFuses and hot swap controllers
- Operating temperature range (°C):
-55 to 125
- 封装:
HTSSOP (DAP)
- 引脚:
32
- 尺寸:
89.1 mm² 11 x 8.1
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TEXAS INSTRUMENTS |
23+ |
CFP16 |
9600 |
全新原装正品!一手货源价格优势! |
询价 | ||
TI/德州仪器 |
25+ |
CFP-16 |
8880 |
原装认准芯泽盛世! |
询价 | ||
TI |
25+ |
(KGD) |
6000 |
原厂原装,价格优势 |
询价 | ||
TI/德州仪器 |
23+ |
CFP-16 |
2000 |
正规渠道,只有原装! |
询价 | ||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
TI/德州仪器 |
23+ |
CFP-16 |
5000 |
只有原装,欢迎来电咨询! |
询价 | ||
TI/德州仪器 |
21+ |
CFP-16 |
9990 |
只有原装 |
询价 | ||
TI(德州仪器) |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
TI/德州仪器 |
25+ |
CFP-16 |
2000 |
原装正品长期现货 |
询价 |
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