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TPS7H2201

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件:2.68613 Mbytes 页数:49 Pages

TI

德州仪器

TPS7H2201

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件:2.61896 Mbytes 页数:51 Pages

TI

德州仪器

TPS7H2201MDAPTSEP

丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.70016 Mbytes 页数:51 Pages

TI

德州仪器

TPS7H2201MDAPTSEP

丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.66611 Mbytes 页数:51 Pages

TI

德州仪器

V62/23608-01XE

丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.70016 Mbytes 页数:51 Pages

TI

德州仪器

V62SLASH23608-01XE

丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.70016 Mbytes 页数:51 Pages

TI

德州仪器

TPS7H2201HKR/EM

丝印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.66611 Mbytes 页数:51 Pages

TI

德州仪器

TPS7H2201HKR/EM

丝印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.70016 Mbytes 页数:51 Pages

TI

德州仪器

TPS7H2201HKR/EM

丝印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR)

文件:2.74487 Mbytes 页数:49 Pages

TI

德州仪器

TPS7H2201HKR/EM

丝印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP Radiation Hardened 1.5-V to 7-V, 6-A Load Switch

1 Features 1• Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg • Integrated single

文件:1.55903 Mbytes 页数:40 Pages

TI

德州仪器

技术参数

  • Ron (typ) (mΩ):

    20

  • Vin (min) (V):

    1.5

  • Vin (max) (V):

    7

  • Vabsmax_cont (V):

    7.5

  • Current limit (min) (A):

    0.5

  • Current limit (max) (A):

    7.5

  • Overcurrent response:

    Circuit breaker

  • Fault response:

    Auto-retry

  • Soft start:

    Adjustable

  • Overvoltage response:

    Cut-off

  • Features:

    Current monitoring

  • Rating:

    Space

  • Device type:

    eFuses and hot swap controllers

  • Operating temperature range (°C):

    -55 to 125

  • 封装:

    HTSSOP (DAP)

  • 引脚:

    32

  • 尺寸:

    89.1 mm² 11 x 8.1

供应商型号品牌批号封装库存备注价格
TEXAS INSTRUMENTS
23+
CFP16
9600
全新原装正品!一手货源价格优势!
询价
TI/德州仪器
25+
CFP-16
8880
原装认准芯泽盛世!
询价
TI
25+
(KGD)
6000
原厂原装,价格优势
询价
TI/德州仪器
23+
CFP-16
2000
正规渠道,只有原装!
询价
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
TI/德州仪器
23+
CFP-16
5000
只有原装,欢迎来电咨询!
询价
TI/德州仪器
21+
CFP-16
9990
只有原装
询价
TI(德州仪器)
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
询价
TI/德州仪器
25+
CFP-16
2000
原装正品长期现货
询价
更多TPS7H2201供应商 更新时间2025-12-9 9:03:00